VDRM = 4500 V Asymmetric Integrated GateCommutated Thyristor
5SHY 35L4520
ITGQM = 4000 A
ITSM = 32×103 A
V(T0) = 1.4 V
rT = 0.325 mW
VDC = 2800 V
Doc. No. 5SYA1248-01 July 14
· High snubberless turn-off rating
· Optimized for medium frequency
· High electromagnetic immunity
· Simple control interface with status feedback
· AC or DC supply voltage
· Option for series connection (contact factory)
Blocking
Maximum rated values 1)
Parameter Symbol Conditions min typ max Unit
Rep. peak off-state voltage VDRM Gate Unit energized 4500 V
Permanent DC voltage for
100 FIT failure rate of GCT
VDC Ambient cosmic radiation at sea
level in open air. Gate Unit energized
2800 V
Reverse voltage VRRM 17 V
Characteristic values
Parameter Symbol Conditions min typ max Unit
Rep. peak off-state current IDRM VD = VDRM, Gate Unit energized 50 mA
Mechanical data (see Fig. 11, 12)
Maximum rated values 1)
Parameter Symbol Conditions min typ max Unit
Mounting force Fm 36 40 44 kN
Characteristic values
Parameter Symbol Conditions min typ max Unit
Pole-piece diameter Dp ± 0.1 mm 85 mm
Housing thickness H clamped Fm =40kN 25.7 26.2 mm
Weight m 2.9 kg
Surface creepage distance Ds Anode to Gate 33 mm
Air strike distance Da Anode to Gate 10 mm
Length l ± 1.0 mm 439 mm
Height h ± 1.0 mm 41 mm
Width IGCT w ± 1.0 mm 173 mm
1) Maximum rated values indicate limits beyond which damage to the device may occur

5SHY35L4520