VDRM =4500V ITGQM =4000A ITSM=35×103A V(T0)=1.15V rT=0.21mΩVDC-link=2800V Asymmetric Integrated Gate-Commutated Thyristor 5SHY 35L4512 Doc. No. 5SYA1233-02 June 07• Lowest on state voltage (2V @ 4000A) • Optimized for low frequency (<100 Hz) and wide temperature range • High reliability • High electromagnetic immunity • Simple control interface with status feedback • AC or DC supply voltage • Contact factory for series connection Blocking Maximum rated values 1)Parameter Symbol Conditions min typ max UnitRep. peak off-state voltageVDRMGate Unit energized 4500 V Permanent DC voltage for 100 FIT failure rate of GCTVDC-linkAmbient cosmic radiation at sea level in open air. Gate Unit energized 2800 V off-state17 V Reverse voltage VRRMIGCT in on-state10 V Characteristic values Parameter Symbol Conditions min typ max UnitRep. peak off-state current IDRMVD = VDRM,Gate Unit energized 50 mAMechanical data (see Fig. 11, 12)Maximum rated values 1)Parameter SymbolConditions min typ max UnitMounting force Fm 36 40 44 kN Characteristic values Parameter SymbolConditions min typ max UnitPole-piece diameter Dp ± 0.1 mm 85 mmHousing thickness H25.3 25.8 mmWeight m2.9 kg Surface creepage distance Ds Anode to Gate 33 mmAir strike distance Da Anode to Gate 10 mmLength l± 1.0 mm 439 mmHeight h± 1.0 mm 40 mmWidth IGCT w± 1.0 mm 173 mm1) Maximum rated values indicate limits beyond which damage to the device may occur

5SHY35L4512