5SHY3545L0020 5SXE05-0154 ABB original module card
5SHY3545L0020 5SXE05-0154 ABB original module card
Maximum allowable opening state diT /dt when opening. The maximum diT/dt is strongly dependent on the gate current (rate of gate current rise, diG/dt and peak gate current magnitude IGM). The large gate current ensures that all IGCT cathode segments are turned on simultaneously for a short period of time, ensuring fast, uniform turn-on and avoiding local turn-on and “hot spots” that can destroy the IGCT. In most applications, turning on the IGCT causes the diode to turn off. The maximum turn-off di/dt of the diode generally limits the allowable commutation rate. The on-gate condition (diG/dt, IGM) of the gate cell is designed to adequately cover the (off) di/dt capability of the fast switching diode. IGCT can achieve higher diT/dtcr, but this increases losses unnecessarily

5SHY3545L0020